Tin laser-produced plasma source modeling at 13.5nm for extreme ultraviolet lithography
John White, Gerry O’Sullivan, S. V. Zakharov, Peter T. Choi, S. V. Zakharov, H. Nishimura, Shinsuke Fujioka, Katsunobu Nishihara
Applied Physics Letters · 2008 · 인용 29
Extreme ultraviolet lithography semiconductor manufacturing requires a 13.5nm light source. Laser-produced plasma emission from Sn V–Sn XIV ions is one proposed industry solution. The effect of laser pulse width and spatial profile on conversion efficiency is analyzed over a range of power densities using a two-dimensional radiative magnetohydrodynamic code and compared to experiment using a 1.064μm, neodymium:yttrium aluminium garnet laser on a planar tin target.
The calculated and experimental conversion efficiencies and the effects of self-absorption in the plasma edge are compared. Best agreement between theory and experiment is found for an 8.0ns Gaussian pulse.