HBM (High Bandwidth Memory) DRAM Technology and Architecture

HBM (High Bandwidth Memory) is an emerging standard DRAM solution that can achieve breakthrough bandwidth of higher than 256GBps while reducing the power consumption as well. It has stacked DRAM architecture with core DRAM dies on top of a base logic die, based on the TSV and die stacking technologies. In this paper, the HBM architecture is introduced and a comparison of its generations is provided.

Also, the packaging technology and challenges to address reliability, thermal dissipation capability, maximum allowable package sizes, and high throughput stacking solutions are described. Test technology and testability features are discussed for KGSD and 2.5D SiP.