Nano-lithography or two-dimensional patterning systems

Abstract The general method used today for the manufacture of semiconductor devices involves the formation of the device pattern by electron beam exposure, followed by reproduction of this pattern by optical exposure system. Resist films are used to generate patterns in electron beam exposure and to replicate patterns in optical exposure. The common method of inspecting patterns made by electron beam or optical exposure systems is direct observation of the resulting resist image.

Patterns are delineated on chrome-coated glass plates (photomasks) by electron beam exposure systems and reproduced on silicon wafers by optical exposure systems.