How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS₂ Transistors?

When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance (C_\textrm{G}) becomes smaller than the oxide capacitance (C_\textrm{ox}) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS_\textrm{2} as a prototypical two-dimensional (2D) channel while considering spatial variations in the potential, charge density, and density of states. At 0.5 nm EOT, the monolayer MoS_\textrm{2} capacitance is smaller than its quantum capacitance, limiting the single-gated C_\textrm{G} of an n-type channel to between 63% and 78% of C_\textrm{ox} for gate overdrive voltages between 0.5 and 1 V.

Despite these limitations, for dual-gated devices, the on-state C_\textrm{G} of monolayer MoS_\textrm{2} is 50% greater than that of silicon at 0.5 nm EOT and more than three times that of InGaAs at 1 nm EOT, indicating that 2D semiconductors are promising for nanoscale devices at future technology nodes.