Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness
J. Jourdon, S. Lhostis, Stephane Moreau, Jérôme Chossat, Michael Arnoux, Clément Sart, Yann Henrion, Patrick Lamontagne, L. Arnaud, N. Bresson, Viorel Balan, Catherine Euvrard, Yorrick Exbrayat, Daniel Scevola, E. Deloffre, Sébastien Mermoz, Andreas Martin, Halim Bilgen, F. Andre, C. Charles, D. Bouchu, A. Farcy, S. Guillaumet, A. Jouve, H. Frémont, Severine Cheramy
Technical digest - International Electron Devices Meeting/Technical digest · 2018 · 인용 89
Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from 8.8 μm down to 1.44 μm bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.